Circular Transmission Line Model (CTLM) Analysis for Non-Linear VI Characteristics on Mg doped GaN

In this paper, we present a model that can be used to determine semiconductor material parameters for metal-semiconductor contacts with non-linear voltage-current (V-I) characteristics. The model uses the Circular Transmission Line Model (CTLM) approach to calculate sheet resistance (RSH) and resist...

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Bibliographic Details
Published inECS transactions Vol. 11; no. 5; pp. 203 - 208
Main Authors Patel, Kinnari N., Stokes, E., Pagan, Jennifer, Burkhart, Casey C., Hodge, Michael, Batoni, Paolo
Format Journal Article
LanguageEnglish
Published 28.09.2007
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Summary:In this paper, we present a model that can be used to determine semiconductor material parameters for metal-semiconductor contacts with non-linear voltage-current (V-I) characteristics. The model uses the Circular Transmission Line Model (CTLM) approach to calculate sheet resistance (RSH) and resistivity (ρ) of Mg doped HVPE and MBE GaN epilayers giving values close to those achieved by Hall measurements.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2783873