Effects of post-deposition anneal on the electrical properties of Si 3 N 4 gate dielectric
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Published in | IEEE electron device letters Vol. 23; no. 3; pp. 124 - 126 |
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Main Authors | , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.03.2002
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Online Access | Get full text |
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ISSN: | 0741-3106 1558-0563 |
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DOI: | 10.1109/55.988812 |