Patterning technology for solution-processed organic crystal field-effect transistors

Organic field-effect transistors (OFETs) are fundamental building blocks for various state-of-the-art electronic devices. Solution-processed organic crystals are appreciable materials for these applications because they facilitate large-scale, low-cost fabrication of devices with high performance. P...

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Published inScience and technology of advanced materials Vol. 15; no. 2; pp. 024203 - 25
Main Authors Li, Yun, Sun, Huabin, Shi, Yi, Tsukagoshi, Kazuhito
Format Journal Article
LanguageEnglish
Published United States Taylor & Francis 01.04.2014
IOP Publishing
Taylor & Francis Ltd
Taylor & Francis Group
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Summary:Organic field-effect transistors (OFETs) are fundamental building blocks for various state-of-the-art electronic devices. Solution-processed organic crystals are appreciable materials for these applications because they facilitate large-scale, low-cost fabrication of devices with high performance. Patterning organic crystal transistors into well-defined geometric features is necessary to develop these crystals into practical semiconductors. This review provides an update on recentdevelopment in patterning technology for solution-processed organic crystals and their applications in field-effect transistors. Typical demonstrations are discussed and examined. In particular, our latest research progress on the spin-coating technique from mixture solutions is presented as a promising method to efficiently produce large organic semiconducting crystals on various substrates for high-performance OFETs. This solution-based process also has other excellent advantages, such as phase separation for self-assembled interfaces via one-step spin-coating, self-flattening of rough interfaces, and in situ purification that eliminates the impurity influences. Furthermore, recommendations for future perspectives are presented, and key issues for further development are discussed.
Bibliography:National Institute for Materials Science
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ISSN:1468-6996
1878-5514
DOI:10.1088/1468-6996/15/2/024203