Very low surface recombination velocity of crystalline silicon passivated by phosphorus‐doped a‐Sic x N y :H(n) alloys

• Published in: Progress in photovoltaics Vol. 16; no. 2; pp. 123 - 127
• Main Authors: Ferre, R., Orpella, A., Munoz, D., Martín, I., Recart, F., Voz, C., Puigdollers, J., Cabarrocas, P. Roca i, Alcubilla, R.
• Format: Journal Article
• Language: English
• Published: 01.03.2008
• ISSN: 1062-7995; 1099-159X
• DOI: 10.1002/pip.802

Abstract Hydrogenated and phosphorus‐doped amorphous silicon carbonitride films (a‐SiC x N y :H(n)) were deposited by plasma‐enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation properties. Very silicon‐rich films yielded effective surface recombination velocities at 1 sun‐illumination as low as 3 cm s −1 and 2 cm s −1 on 1 Ω cm p‐ and n‐type crystalline silicon substrates, respectively. In order to use them as anti‐reflection coating, we increased alternatively either the carbon or nitrogen content of these films. Also, a combination of passivation and antireflective films was analyzed. Finally, we explored the passivation stability under high‐temperature steps. Copyright © 2007 John Wiley & Sons, Ltd.