High On/Off Current Ratio and High V th / R on Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier

In this work, the electrical characteristics and bias stress reliability of GaN/AlN superlattices (SLs) metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with Al2O3 dielectric are experimentally investigated. In comparison to the conventional AlGaN barrier MIS-HEMTs, the G...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 71; no. 5; pp. 2920 - 2924
Main Authors Li, Shanjie, Zeng, Fanyi, Xing, Zhiheng, Wu, Nengtao, Cao, Ben, Luo, Ling, Wu, Changtong, Wang, Wenliang, Li, Guoqiang
Format Journal Article
LanguageEnglish
Published New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.05.2024
Subjects
Aluminum gallium nitrides
Aluminum nitride
Aluminum oxide
Bias
Electron gas
Gallium nitrides
High electron mobility transistors
Insulators
Interface stability
MIS (semiconductors)
Semiconductor devices
Superlattices
Threshold voltage
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Summary:In this work, the electrical characteristics and bias stress reliability of GaN/AlN superlattices (SLs) metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) with Al2O3 dielectric are experimentally investigated. In comparison to the conventional AlGaN barrier MIS-HEMTs, the GaN/AlN SLs MIS-HEMTs exhibit a higher ON/OFF current ratio ([Formula Omitted]), higher gate forward breakdown voltage (BV) (15.2 V) and OFF -state BV (495 V), lower ON-resistance ([Formula Omitted]/mm[Formula Omitted]). Moreover, the threshold voltage ([Formula Omitted]) shift and ON-resistance (R on) degradation under bias stress are further monitored. The GaN/AlN SLs MIS-HEMTs demonstrate excellent [Formula Omitted] and [Formula Omitted] stability, attributed to the superior dielectric/barrier interface quality and effective 2-D electron gas confinement provided by the GaN/AlN superlattice structure. These results ensure the superior performance and stability of GaN/AlN SLs MIS-HEMTs for power/RF applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2024.3372931