Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

• Published in: Nature communications Vol. 10; no. 1; pp. 5569 - 8
• Main Authors: Niethammer, Matthias, Widmann, Matthias, Rendler, Torsten, Morioka, Naoya, Chen, Yu-Chen, Stöhr, Rainer, Hassan, Jawad Ul, Onoda, Shinobu, Ohshima, Takeshi, Lee, Sang-Yun, Mukherjee, Amlan, Isoya, Junichi, Son, Nguyen Tien, Wrachtrup, Jörg
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 05.12.2019; Nature Publishing Group; Nature Portfolio
• Subjects: 639/301/1005/1007; 639/301/1005/1009; 639/301/119/1000; 639/766/1130; 639/766/483; Coherence; Electron spin; Electronics industry; Fabrication; Fluorescence; Humanities and Social Sciences; Ionization; Low temperature; Magnetic fields; Motion perception; multidisciplinary; Photoelectricity; Point defects; Science; Science (multidisciplinary); Silicon; Silicon carbide; Wide bandgap semiconductors
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/s41467-019-13545-z

Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects, the approach presented here holds promises for scalability of future SiC quantum devices. The efficiency of quantum state readout is one of the factors that determine the performance of point defects in semiconductors in practical applications. Here the authors demonstrate photo-electrical readout for silicon vacancies in silicon carbide, providing an alternative to optical detection.