c -Axis Aligned 3 nm Thick In 2 O 3 Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility-Stability Trade-off

• Published in: Nano letters Vol. 24; no. 4; pp. 1324 - 1331
• Main Authors: Choi, Su-Hwan, Ryu, Seong-Hwan, Kim, Dong-Gyu, Kwag, Jae-Hyeok, Yeon, Changbong, Jung, Jaesun, Park, Young-Soo, Park, Jin-Seong
• Format: Journal Article
• Language: English
• Published: United States 31.01.2024
• Subjects: Atomic Layer Deposition (ALD); Oxide Semiconductor; Crystallinity; New Indium Precursor; Field-Effect Transistor (FET)
• DOI: 10.1021/acs.nanolett.3c04312
• ISSN: 1530-6984

Oxide semiconductors (OS) are attractive materials for memory and logic device applications owing to their low off-current, high field effect mobility, and superior large-area uniformity. Recently, successful research has reported the high field-effect mobility (μ ) of crystalline OS channel transistors (above 50 cm V s ). However, the memory and logic device application presents challenges in mobility and stability trade-offs. Here, we propose a method for achieving high-mobility and high-stability by lowering the grain boundary effect. A DBADMIn precursor was synthesized to deposit highly -axis-aligned C(222) crystalline 3 nm thick In O films. In this study, the 250 °C deposited 3 nm thick In O channel transistor exhibited high μ of 41.12 cm V s , of -0.50 V, and SS of 150 mV decade with superior stability of 0.16 V positive shift during PBTS at 100 °C, 3 MV cm stress conditions for 3 h.