c -Axis Aligned 3 nm Thick In 2 O 3 Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility-Stability Trade-off
Oxide semiconductors (OS) are attractive materials for memory and logic device applications owing to their low off-current, high field effect mobility, and superior large-area uniformity. Recently, successful research has reported the high field-effect mobility (μ ) of crystalline OS channel transis...
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Published in | Nano letters Vol. 24; no. 4; pp. 1324 - 1331 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
31.01.2024
|
Subjects | |
Online Access | Get full text |
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Summary: | Oxide semiconductors (OS) are attractive materials for memory and logic device applications owing to their low off-current, high field effect mobility, and superior large-area uniformity. Recently, successful research has reported the high field-effect mobility (μ
) of crystalline OS channel transistors (above 50 cm
V
s
). However, the memory and logic device application presents challenges in mobility and stability trade-offs. Here, we propose a method for achieving high-mobility and high-stability by lowering the grain boundary effect. A DBADMIn precursor was synthesized to deposit highly
-axis-aligned C(222) crystalline 3 nm thick In
O
films. In this study, the 250 °C deposited 3 nm thick In
O
channel transistor exhibited high μ
of 41.12 cm
V
s
,
of -0.50 V, and SS of 150 mV decade
with superior stability of 0.16 V positive shift during PBTS at 100 °C, 3 MV cm
stress conditions for 3 h. |
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ISSN: | 1530-6984 1530-6992 |
DOI: | 10.1021/acs.nanolett.3c04312 |