700 Å Gate length buried channel Silicon MOSFET's

Buried channel silicon MOSFETs with gate lengths as small as 700 Å have been fabricated using high-resolution electron-beam lithography, multilayer resists, reactive-ion etching, and low temperature processing. In this paper we describe the variations of I-V characteristic, transconductance, pinch-o...

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Bibliographic Details
Published in1982 International Electron Devices Meeting pp. 642 - 645
Main Authors Swartz, R.G., Howard, R.E., Jackel, L.D., Grabbe, P., Epworth, R.W., Tennant, D.M., Archer, V.D.
Format Conference Proceeding
LanguageEnglish
Published IRE 1982
Subjects
Electrons
Fabrication
Implants
Lithography
Metallization
MOSFETs
Oxidation
Predictive models
Silicon
Voltage
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Summary:Buried channel silicon MOSFETs with gate lengths as small as 700 Å have been fabricated using high-resolution electron-beam lithography, multilayer resists, reactive-ion etching, and low temperature processing. In this paper we describe the variations of I-V characteristic, transconductance, pinch-off voltage, and output resistance as a function of gate length.
DOI:10.1109/IEDM.1982.190375