A novel scaled down oxygen implanted polysilicon resistor for future static RAMs

A novel scaled down high resistor (1µm or less in length) for future static RAMs was realized by using the slow arsenic diffusion in oxygen implanted polysilicon, where arsenic is partially doped to form polysilicon interconnection layer. The current voltage characteristics of the oxygen doped polys...

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Bibliographic Details
Published in1986 International Electron Devices Meeting pp. 296 - 299
Main Authors Saito, R., Sawahata, Y., Nagano, T., Momma, N.
Format Conference Proceeding
LanguageEnglish
Published IRE 1986
Subjects
Cities and towns
Current-voltage characteristics
Doping
Grain boundaries
Heat treatment
Impurities
Laboratories
Read-write memory
Resistors
Voltage
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Summary:A novel scaled down high resistor (1µm or less in length) for future static RAMs was realized by using the slow arsenic diffusion in oxygen implanted polysilicon, where arsenic is partially doped to form polysilicon interconnection layer. The current voltage characteristics of the oxygen doped polysilicon resistors were almost linear, and the marked decrease in resistance for higher applied voltage, observed in non-doped polysilicon, could not be found. Moreover the field effect modulation of the resistance in the oxygen doped polysilicon was much less than that of non-doped one. Applicability of the scaled down oxygen implanted polysilicon resistor was thus demonstrated for future static RAMs.
DOI:10.1109/IEDM.1986.191174