Over 12000 A/cm2 and 3.2 m \Omega cm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET

• Published in: IEEE electron device letters Vol. 41; no. 1; pp. 111 - 114
• Main Authors: Iwataki, Masayuki, Oi, Nobutaka, Horikawa, Kiyotaka, Amano, Shotaro, Nishimura, Jun, Kageura, Taisuke, Inaba, Masafumi, Hiraiwa, Atsushi, Kawarada, Hiroshi
• Format: Journal Article
• Language: English
• Published: IEEE 01.01.2020
• Subjects: Diamond; Electrodes; Logic gates; MOSFET; Nitrogen; Resistance; Two dimensional hole gas; vertical-type device
• ISSN: 0741-3106
• DOI: 10.1109/LED.2019.2953693

We present a miniaturized vertical-type twodimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) by adopting a gate-source overlapping structure. We developed a 2-μm-wide trench and disposed a part of the gate electrode to overlap the Al 2 O 3 insulator film on the source electrode to eliminate the space between source and gate electrode. We obtained the maximum drain current density of ID = 12800 A/cm 2 at V DS = -50 V and the specific on-resistance of R ON = 3.2 mcm 2 at V DS = -10 V and confirmed their improvement by the miniaturization of devices and reduction of source to gate resistance. In addition, the drain current on/off ratio was 7 orders magnitude even at 200 °C with the formation of a highly concentrated, thick nitrogen-doped layer as the current blocking layer.