Anisotropic etching for forming isolation slots in silicon beam leaded integrated circuits

Anisotropic silicon etches which preferentially attack the {100} and {110} crystal planes have been used to form narrow well-controlled isolation slots in silicon beam-leaded integrated circuits. The etches of interest are characterized by etching rates, R, on the low order crystal planes in the ord...

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Bibliographic Details
Published in1967 International Electron Devices Meeting p. 68
Main Authors Waggener, H.A., Kragness, R.C., Tyler, A.L.
Format Conference Proceeding
LanguageEnglish
Published IRE 1967
Subjects
Anisotropic magnetoresistance
Circuits
Computational geometry
Crystallization
Crystallography
Etching
Gold
Lead
Process design
Silicon
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Summary:Anisotropic silicon etches which preferentially attack the {100} and {110} crystal planes have been used to form narrow well-controlled isolation slots in silicon beam-leaded integrated circuits. The etches of interest are characterized by etching rates, R, on the low order crystal planes in the order R{100} > R{110} > R{111}, and for which R{111} is effectively zero.
DOI:10.1109/IEDM.1967.187830