Red Phosphorescent Bis-Cyclometalated Iridium Complexes with Fluorine-, Phenyl-, and Fluorophenyl-Substituted 2-Arylquinoline Ligands
Red phosphorescent iridium(III) complexes based on fluorine‐, phenyl‐, and fluorophenyl‐substituted 2‐arylquinoline ligands were designed and synthesized. To investigate their electrophosphorescent properties, devices were fabricated with the following structure: indium tin oxide (ITO)/4,4′,4′′‐tris...
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Published in | Chemistry : a European journal Vol. 22; no. 12; pp. 4036 - 4045 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
WEINHEIM
Blackwell Publishing Ltd
14.03.2016
Wiley Wiley Subscription Services, Inc |
Subjects | |
Online Access | Get full text |
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Summary: | Red phosphorescent iridium(III) complexes based on fluorine‐, phenyl‐, and fluorophenyl‐substituted 2‐arylquinoline ligands were designed and synthesized. To investigate their electrophosphorescent properties, devices were fabricated with the following structure: indium tin oxide (ITO)/4,4′,4′′‐tris[2‐naphthyl(phenyl)amino]triphenylamine (2‐TNATA)/4,4′‐bis[N‐(1‐naphthyl)‐N‐phenylamino]biphenyl (NPB)/4,4′‐bis(N‐carbazolyl)‐1,1′‐biphenyl (CBP): 8 % iridium (III) complexes/bathocuproine (BCP)/tris(8‐hydroxyquinolinato)aluminum (Alq3)/8‐hydroxyquinoline lithium (Liq)/Al. All devices, which use these materials showed efficient red emissions. In particular, a device exhibited a saturated red emission with a maximum luminance, external quantum efficiency, and luminous efficiency of 14200 cd m−2, 8.44 %, and 6.58 cd A−1 at 20 mA cm−2, respectively. The CIE (x, y) coordinates of this device are (0.67, 0.33) at 12.0 V.
Dopant in red: Nine iridium complexes with fluorine‐, phenyl‐, and fluorophenyl‐substituted 2‐arylquinoline ligands for red phosphorescence organic light‐emitting diodes were prepared. A device based on (2,4‐pentanedionato)bis[2‐(9,9‐dimethyl‐9 H‐fluoren‐2‐yl)‐5‐(4‐fluorophenyl)quinolinyl]iridium(III) showed an efficient deep red emission with an external quantum efficiency of 8.44 % at 20 mA cm−2. |
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Bibliography: | Basic Science Research Program ark:/67375/WNG-KFG2PZ4T-V istex:54D662480824D8091C966591856C9011976E0613 ArticleID:CHEM201504392 Ministry of Education, Science and Technology, South Korea - No. NRF-2013R1A1A2A10008105 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0947-6539 1521-3765 |
DOI: | 10.1002/chem.201504392 |