剂量率切换辐照加速方法适用性的数值评估

为进行剂量率切换辐照加速方法适用性的数值评估,基于定量损伤物理模型和剂量率切换加速方法实验测试条件,以氢浓度、初始缺陷浓度和温度为变量,对金属绝缘层半导体（Metal insulator semiconductor,MIS）结构进行了系统的数值模拟。结果表明,剂量率切换辐照加速方法的适用性对双极器件氧化层内的氢浓度及缺陷浓度有很强的依赖。因此,剂量率切换加速方法的实验可能对部分器件和电路不再适用。...

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Published in辐射研究与辐射工艺学报 Vol. 35; no. 1; pp. 57 - 64
Main Author 张修瑜 冯晓龙 李鸿亮 宋宇 代刚
Format Journal Article
LanguageChinese
Published 中国工程物理研究院电子工程研究所 绵阳621000 2017
中国工程物理研究院微系统与太赫兹研究中心 成都610200
Subjects
初始缺陷浓度
剂量率切换
加速方法
数值模拟
氢浓度
Hydrogen concentration
初始缺陷浓度
Acceleration methods
加速方法
氢浓度
剂量率切换
Numerical simulation
Dose rate switching
数值模拟
Initial defect concentrations
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Summary:为进行剂量率切换辐照加速方法适用性的数值评估,基于定量损伤物理模型和剂量率切换加速方法实验测试条件,以氢浓度、初始缺陷浓度和温度为变量,对金属绝缘层半导体（Metal insulator semiconductor,MIS）结构进行了系统的数值模拟。结果表明,剂量率切换辐照加速方法的适用性对双极器件氧化层内的氢浓度及缺陷浓度有很强的依赖。因此,剂量率切换加速方法的实验可能对部分器件和电路不再适用。
Bibliography:ZHANG Xiuyu1,2 FENG Xiaolong1,2 LI Hongliang1,2 SONG Yu1,2 DAI Gang1,2 1（Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621000, China） 2（Microsystem ＆ Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China）
Dose rate switching, Acceleration methods, Numerical simulation, Hydrogen concentration, Initialdefect concentrations
31-1258/TL
For the sake of evaluating the feasibility of dose rate switching technique, systematic numerical simulations on the MIS（Metal insulator semiconductor） structure was done based on a quantitative physical model and the experimental conditions of dose rate switching technique, regarding hydrogen concentration, initial defect concentrations and temperature as variables. It turned out that the feasibility of the dose rate switching technique is strongly dependent on the hydrogen concentration and initial defects concentrations in the oxide layer of the bipolar devices. Therefore, the experiments of dose rate switching
ISSN:1000-3436
DOI:10.11889/j.1000-3436.2017.rrj.35.010701