Laser-fired contact optimization in c-Si solar cells

• Published in: Progress in photovoltaics Vol. 20; no. 2; pp. 173 - 180
• Main Authors: Ortega, P., Orpella, A., Martín, I., Colina, M., López, G., Voz, C., Sánchez, M. I., Molpeceres, C., Alcubilla, R.
• Format: Journal Article Publication
• Language: English
• Published: Chichester, UK John Wiley & Sons, Ltd 01.03.2012; Wiley; Wiley Subscription Services, Inc
• Subjects: Aluminum oxide; Applied sciences; Contact; Cèl·lules solars; Deposition; Energia solar; Energia solar fotovoltaica; Energies; Energy; Exact sciences and technology; laser-fired contact; Lasers; Natural energy; Passivation; passivation layer; PERC solar cell; Photovoltaic cells; Photovoltaic conversion; Photovoltaic effect; Process parameters; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy; specific contact resistance; spreading resistance; Àrees temàtiques de la UPC; Solar cell; Silicon solar cells; laser-fired contact; specific contact resistance; Contact resistance; passivation layer; Optimization; Spreading resistance; Passivation; PERC solar cell
• ISSN: 1062-7995; 1099-159X
• DOI: 10.1002/pip.1115

ABSTRACT In this work we study the optimization of laser‐fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically used in c‐Si and mc‐Si solar cell fabrication: thermally grown silicon oxide (SiO2), deposited phosphorus‐doped amorphous silicon carbide (a‐SiCx/H(n)), aluminum oxide (Al2O3) and silicon nitride (SiNx/H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65–3 mΩ cm2 have been obtained. Copyright © 2011 John Wiley & Sons, Ltd. This work studies the optimization of laser‐fired contact (LFC) processing parameters. LFC process has been made through four passivation layers that are typically used in c‐Si and mc‐Si solar cell fabrication: thermal silicon oxide (SiO2), deposited phosphorus‐doped amorphous silicon carbide (a‐SiCx:H(n)), aluminum oxide (Al2O3) and silicon nitride (SiNx:H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65‐3mΩcm2 have been obtained.