Output Power of a Semiconductor Laser in an External Cavity

We present the processing procedure for obtaining efficient silicon nitride anti-reflection coating on semiconductor laser facet. Fabrication of an external cavity laser using a commer¬cially available semiconductor laser has been demonstrated. The output power of an exter¬nal cavity semiconductor l...

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Bibliographic Details
Published inJournal of optics (New Delhi) Vol. 27; no. 4; pp. 179 - 184
Main Authors Hegde, G. M., Ramamurthi, Anand V., Das, Shyam Kumar, Selvarajan, A.
Format Journal Article
LanguageEnglish
Published Dordrecht Springer Nature B.V 01.12.1998
Subjects
Antireflection coatings
External-cavity lasers
Lasers
Semiconductor lasers
Silicon nitride
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Summary:We present the processing procedure for obtaining efficient silicon nitride anti-reflection coating on semiconductor laser facet. Fabrication of an external cavity laser using a commer¬cially available semiconductor laser has been demonstrated. The output power of an exter¬nal cavity semiconductor laser has been studied experimentally for different feedback levels.
ISSN:0972-8821
0974-6900
DOI:10.1007/BF03549345