Large-area and bright pulsed electroluminescence in monolayer semiconductors

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostr...

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Published inNature communications Vol. 9; no. 1; pp. 1229 - 7
Main Authors Lien, Der-Hsien, Amani, Matin, Desai, Sujay B., Ahn, Geun Ho, Han, Kevin, He, Jr-Hau, Ager, Joel W., Wu, Ming C., Javey, Ali
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 26.03.2018
Nature Publishing Group
Nature Portfolio
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Summary:Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS 2 , WS 2 , MoSe 2 , and WSe 2 ) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device. Atomically thin monolayers with high photoluminescence quantum yield are promising for optoelectronic and lighting applications. Here, the authors fabricate a transient-mode electroluminescent device to bypass the requirement of ohmic contacts for electrons and holes, and observe millimetre-scale light emission from a transparent 2D display.
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USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
AC02-05CH11231; 1623038
National Science Foundation (NSF)
ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-018-03218-8