Influence of the doping level and the temperature on electron mobility in then channel of an mos field-effect transistor

Based on results of measurement and processing of volt-ampere characteristics as well as linetic modeling of electron transfer by the Monte Carlo method, the influence of the doping level and the temperature on electron mobility in the n channel of a silicon MOS field-effect transistor operating in...

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Bibliographic Details
Published inJournal of engineering physics and thermophysics Vol. 71; no. 1; pp. 111 - 114
Main Authors Andreev, A. D., Borzdov, V. M., Valiev, A. A., Zhevnyak, O. G., Komarov, F. F.
Format Journal Article
LanguageEnglish
Published Heidelberg Springer Nature B.V 01.01.1998
Subjects
Monte Carlo simulation
Temperature
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Summary:Based on results of measurement and processing of volt-ampere characteristics as well as linetic modeling of electron transfer by the Monte Carlo method, the influence of the doping level and the temperature on electron mobility in the n channel of a silicon MOS field-effect transistor operating in a linear regime is investigated.[PUBLICATION ABSTRACT]
ISSN:1062-0125
1573-871X
DOI:10.1007/BF02682504