D-Band GCPW-to-Waveguide Transition Using Silicon Micromachined Technology for Planar Integrated MMIC and Aperture Antenna

This paper proposes a D-band transversal transition from a ground coplanar waveguide (GCPW) to an air waveguide. Such design is critical to the radio frequency (RF) front end between the monolithic microwave integration circuit (MMIC) and aperture antenna especially in sub-terahertz frequency due to...

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Bibliographic Details
Published inIEEE antennas and wireless propagation letters pp. 1 - 5
Main Authors Lu, Sen, Shen, Yizhu, Ding, Yifan, Hu, Sanming
Format Journal Article
LanguageEnglish
Published IEEE 07.10.2024
Subjects
Coplanar waveguides
Couplings
D-band
Dielectrics
Electromagnetic waveguides
GCPW-to-waveguide transition
Metals
planar integration
Planar waveguides
Radio frequency
radio-frequency (RF) front end
Rectangular waveguides
Silicon
silicon micromachined technology
Waveguide transitions
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Summary:This paper proposes a D-band transversal transition from a ground coplanar waveguide (GCPW) to an air waveguide. Such design is critical to the radio frequency (RF) front end between the monolithic microwave integration circuit (MMIC) and aperture antenna especially in sub-terahertz frequency due to the high loss in dielectric substrate. Silicon micromachined technology, as an advanced packaging technology, not only features a multi-layer arrangement similar to the PCB technology, but also supports the development of air cavity inside it, such as the rectangular waveguide. Adopting this technology, a WR-6 waveguide with a reduced height of 150 μm is developed within silicon substrates. Moreover, inspired by the classical aperture-coupled antenna, a magnetic coupling structure comprising a short-circuit end and a same-layer coupling aperture are proposed to facilitate the mode transformation from quasiTEM to TE10. Benefiting from this structure, the signal from GCPW is effectively transmitted to the waveguide. Measurements of two back-to-back prototypes indicate that the average insertion loss of one proposed transition is 0.355 dB within D-band, and the 1 mm-length waveguide induces loss of 0.075 dB, respectively. The transition is with low profile of 400 μm and wide bandwidth of 42.9%, which is promising for planar sub-terahertz system
ISSN:1536-1225
1548-5757
DOI:10.1109/LAWP.2024.3476270