Rare earth doped CaCu_3Ti_4O_(12) electronic ceramics for high frequency applications

• Published in: Journal of rare earths Vol. 28; no. 1; pp. 43 - 47
• Main Author: 慕春红 张怀武 刘颖力 宋远强 刘鹏
• Format: Journal Article
• Language: English
• Published: State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China%School of Physics and Information Technology,Shaanxi Normal University,Xi′an 710062,China 2010
• Subjects: CaCu_3Ti_4O; dielectric relaxation; rare earth ions doping; LTCC devices; electronic ceramics
• ISSN: 1002-0721; 2509-4963
• DOI: 10.1016/S1002-0721(09)60048-X

Ca1-xRxCu3Ti4O12(R=La,Y,Gd;x=0,0.1,0.2,0.3) electronic ceramics were fabricated by conventional solid-state reaction method.The microstructure and dielectric properties as well as impedance behavior were carefully investigated.XRD results showed that the secondary phases with the general formula R2Ti2O7 existed at grain boundaries of rare earth doped ceramics,which inhibited abnormal grain growth.The dielectric constant decreased from 4×105 in pure CaCu3Ti4O12(CCTO) ceramics to 2×103 with rare earth doping...