The Effect of Ferroelectric/Dielectric Capacitance Ratio on Short-Term Retention Characteristics of MFMIS FeFET

• Published in: IEEE journal of the Electron Devices Society p. 1
• Main Authors: Hwang, Junghyeon, Kim, Giuk, Joh, Hongrae, Ahn, Jinho, Jeon, Sanghun
• Format: Journal Article
• Language: English
• Published: IEEE 23.10.2024
• Subjects: Capacitance; Capacitors; Delays; Depolarization field; FeFETs; Ferroelectric FET (FeFET); Hafnia ferroelectric; Iron; Logic gates; MOS capacitors; Retention; Silicon; Switches; Voltage measurement

Metal-ferroelectric-metal-insulator-semiconductor (MFMIS) FeFETs have significant potential for use in non-volatile memory applications. This is primarily due to their compatibility with CMOS technology and reliable switching characteristics. Previous studies have primarily concentrated on the endur...