Colloidal Synthesis of P-Type Zn 3 As 2 Nanocrystals

• Published in: Advanced materials (Weinheim) Vol. 36; no. 21; p. e2310671
• Main Authors: Kim, Seongchan, Lee, Kyumin, Gwak, Namyoung, Shin, Seungki, Seo, Jaeyoung, Noh, Sung Hoon, Kim, Doyeon, Lee, Yunseo, Kong, Hyein, Yeo, Dongjoon, Lee, Seung-Yong, Jang, Jaeyoung, Oh, Nuri
• Format: Journal Article
• Language: English
• Published: Germany 01.05.2024
• Subjects: p-type; II-V semiconductors; zinc arsenide; colloidal nanocrystals; FETs
• ISSN: 0935-9648; 1521-4095
• DOI: 10.1002/adma.202310671

Zinc pnictides, particularly Zn As , hold significant promise for optoelectronic applications owing to their intrinsic p-type behavior and appropriate bandgaps. However, despite the outstanding properties of colloidal Zn As nanocrystals, research in this area is lacking because of the absence of suitable precursors, occurrence of surface oxidation, and intricacy of the crystal structures. In this study, a novel and facile solution-based synthetic approach is presented for obtaining highly crystalline p-type Zn As nanocrystals with accurate stoichiometry. By carefully controlling the feed ratio and reaction temperature, colloidal Zn As nanocrystals are successfully obtained. Moreover, the mechanism underlying the conversion of As precursors in the initial phases of Zn As synthesis is elucidated. Furthermore, these nanocrystals are employed as active layers in field-effect transistors that exhibit inherent p-type characteristics with native surface ligands. To enhance the charge transport properties, a dual passivation strategy is introduced via phase-transfer ligand exchange, leading to enhanced hole mobilities as high as 0.089 cm V s . This study not only contributes to the advancement of nanocrystal synthesis, but also opens up new possibilities for previously underexplored p-type nanocrystal research.