Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer

Planar perovskite solar cells using low‐temperature atomic layer deposition (ALD) of the SnO2 electron transporting layer (ETL), with excellent electron extraction and hole‐blocking ability, offer significant advantages compared with high‐temperature deposition methods. The optical, chemical, and el...

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Published inAdvanced science Vol. 5; no. 6; pp. 1800130 - n/a
Main Authors Lee, Yonghui, Lee, Seunghwan, Seo, Gabseok, Paek, Sanghyun, Cho, Kyung Taek, Huckaba, Aron J., Calizzi, Marco, Choi, Dong‐won, Park, Jin‐Seong, Lee, Dongwook, Lee, Hyo Joong, Asiri, Abdullah M., Nazeeruddin, Mohammad Khaja
Format Journal Article
LanguageEnglish
Published Germany John Wiley & Sons, Inc 01.06.2018
John Wiley and Sons Inc
Wiley
Subjects
atomic layer deposition
Communication
Communications
Electrodes
Heat
Morphology
passivation
perovskites
Photovoltaic cells
planar perovskite solar cells
R&D
Research & development
SnO2 electron transporting layers
Spectrum analysis
perovskites
passivation
planar perovskite solar cells
atomic layer deposition
SnO2 electron transporting layers
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Summary:Planar perovskite solar cells using low‐temperature atomic layer deposition (ALD) of the SnO2 electron transporting layer (ETL), with excellent electron extraction and hole‐blocking ability, offer significant advantages compared with high‐temperature deposition methods. The optical, chemical, and electrical properties of the ALD SnO2 layer and its influence on the device performance are investigated. It is found that surface passivation of SnO2 is essential to reduce charge recombination at the perovskite and ETL interface and show that the fabricated planar perovskite solar cells exhibit high reproducibility, stability, and power conversion efficiency of 20%. Atomic layer deposition (ALD) of SnO2 for perovskite solar cells is investigated. It is shown that low‐temperature‐processed ALD SnO2 is self‐passivated by the residual precursor. It is found that the surface passivation of SnO2 is essential to reduce charge recombination at the perovskite and electron transporting layer interface, which leads to a high power conversion efficiency of 20% in a planar structure.
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ISSN:2198-3844
2198-3844
DOI:10.1002/advs.201800130