Rapid and Nondestructive Identification of Polytypism and Stacking Sequences in Few-Layer Molybdenum Diselenide by Raman Spectroscopy

• Published in: Advanced materials (Weinheim) Vol. 27; no. 30; pp. 4502 - 4508
• Main Authors: Lu, Xin, Utama, M. Iqbal Bakti, Lin, Junhao, Luo, Xin, Zhao, Yanyuan, Zhang, Jun, Pantelides, Sokrates T., Zhou, Wu, Quek, Su Ying, Xiong, Qihua
• Format: Journal Article
• Language: English
• Published: Germany Blackwell Publishing Ltd 01.08.2015; Wiley
• Subjects: Chemical vapor deposition; few layer MoSe2; interlayer shear mode; Interlayers; MATERIALS SCIENCE; Mathematical analysis; Molybdenum; molybdenum diselenide; polytypism; Raman spectroscopy; Stacking; Two dimensional; interlayer shear mode; polytypism; molybdenum diselenide; few layer MoSe2; stacking
• ISSN: 0935-9648; 1521-4095
• DOI: 10.1002/adma.201501086

Various combinations of interlayer shear modes emerge in few‐layer molybdenum diselenide grown by chemical vapor deposition depending on the stacking configuration of the sample. Raman measurements may also reveal polytypism and stacking faults, as supported by first principles calculations and high‐resolution transmission electron microscopy. Thus, Raman spectroscopy is an important tool in probing stacking‐dependent properties in few‐layer 2D materials.