影响SiC外延生长速率的相关因素探讨

研制了水平热壁式外延沉积系统,设计了双加热器温控系统和水平三层流喷淋系统,介绍了温场和流场获得方法。在偏4°的Si面4H-SiC单晶衬底上进行了工艺验证。研究了生长温度、C/Si以及SiH_4流量对SiC外延生长速率的影响,通过主要参数的综合调整,生长出了表面光滑的SiC外延膜。...

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Bibliographic Details
Published in电子工业专用设备 Vol. 46; no. 5; pp. 14 - 17
Main Author 丁杰钦 陈特超 林伯奇 龙长林 杨一鸣 龚杰洪
Format Journal Article
LanguageChinese
Published 中国电子科技集团公司第四十八研究所,长沙,410111 2017
Subjects
4H-SiC
C/Si比
三层流喷淋头
生长速率
生长速率
三层流喷淋头
4H-SiC
C/Si比
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Summary:研制了水平热壁式外延沉积系统,设计了双加热器温控系统和水平三层流喷淋系统,介绍了温场和流场获得方法。在偏4°的Si面4H-SiC单晶衬底上进行了工艺验证。研究了生长温度、C/Si以及SiH_4流量对SiC外延生长速率的影响,通过主要参数的综合调整,生长出了表面光滑的SiC外延膜。
Bibliography:62-1077/TN
Horizontal hot-wall chemical vapor deposition system was fabricated. Double heat systems and horizontal three-layerflow injector were designedafter taking the simulation of temperature and flow fields into consideration.The methods for obtaining temperature and flow fieldswere introduced. Epitaxial processes were performed on 4° off Si-face 4H-SiC substrates. The influence of growth temperature, C/Si ratio, and silane flow on growth rate was investigated. Smooth SiC epilayer was successfully grown by adjusting the main parameters.
Three-layer flow injector, 4H-SiC, C/Si ratio, Growth rate.
DING Jieqin, CHEN Techao, LIN Boqi, LONG Changling, YANG Yiming, GONG Jiehong （The 48th Research Institute of CETC, Changsha 410111, China）
ISSN:1004-4507