Tuning the optical band gap and electrical properties of NiO thin films by nitrogen doping: a joint experimental and theoretical study

A joint experimental and theoretical study is presented to reveal the influence of nitrogen doping on the optical and electrical properties of NiO thin films. Nitrogen addition can significantly enhance the subgap absorption. The molecular state of nitrogen (N 2 ) has been identified in these doped...

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Published inRSC Advances Vol. 12; no. 34; pp. 21940 - 21945
Main Authors Wang, Yong, Bruyre, Stphanie, Kumagai, Yu, Tsunoda, Naoki, Oba, Fumiyasu, Ghanbaja, Jaafar, Sun, Hui, Dai, Bo, Pierson, Jean-Franois
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry (RSC) 10.08.2022
Royal Society of Chemistry
The Royal Society of Chemistry
Subjects
[CHIM.MATE]Chemical Sciences/Material chemistry
[SPI.MAT]Engineering Sciences [physics]/Materials
absorption
Chemical Sciences
Chemistry
Doping
Electrical properties
Electron energy loss spectroscopy
energy
Engineering Sciences
Material chemistry
Materials
nickel oxide
Nickel oxides
Nitrogen
Optical properties
spectroscopy
Thin films
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ISSN2046-2069
2046-2069
DOI10.1039/d2ra01887j

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Summary:A joint experimental and theoretical study is presented to reveal the influence of nitrogen doping on the optical and electrical properties of NiO thin films. Nitrogen addition can significantly enhance the subgap absorption. The molecular state of nitrogen (N 2 ) has been identified in these doped thin films by electron energy loss spectroscopy. A joint experimental and theoretical study is presented to reveal the influence of nitrogen doping on the optical and electrical properties of NiO thin films.
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ISSN:2046-2069
2046-2069
DOI:10.1039/d2ra01887j