基于集成众核的3D蒙特卡罗半导体器件模拟器
3D蒙特卡罗器件模拟计算量大，计算量随网格与粒子数增加而急剧增加。通过分析3D蒙卡模拟加速热点和进一步可并行性，研究有效电势方法的集成众核并行方案；研究粒子自由飞行、统计模拟信息、计算表面粗糙散射等热点并行方案，最终实现基于CPU／MIC的三级并行3D蒙特卡罗器件模拟软件。实验结果显示，三级并行比单级并行获得更好的性能；当提高模拟精度时，相比单级并行，三级并行蒙特卡罗模拟加速比增加。...
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| Published in | 计算机工程与科学 Vol. 37; no. 4; pp. 621 - 627 |
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| Main Author | |
| Format | Journal Article |
| Language | Chinese |
| Published |
国家超级计算广州中心,广东广州510006%北京航空航天大学电子信息工程学院,北京100091
2015
国防科学技术大学计算机学院,湖南长沙,410073%国防科学技术大学计算机学院,湖南长沙410073 北京航空航天大学自旋电子交叉研究中心,北京100091%北京大学微纳电子学研究院,北京,100871 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1007-130X |
| DOI | 10.3969/j.issn.1007-130X.2015.04.001 |
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| Summary: | 3D蒙特卡罗器件模拟计算量大，计算量随网格与粒子数增加而急剧增加。通过分析3D蒙卡模拟加速热点和进一步可并行性，研究有效电势方法的集成众核并行方案；研究粒子自由飞行、统计模拟信息、计算表面粗糙散射等热点并行方案，最终实现基于CPU／MIC的三级并行3D蒙特卡罗器件模拟软件。实验结果显示，三级并行比单级并行获得更好的性能；当提高模拟精度时，相比单级并行，三级并行蒙特卡罗模拟加速比增加。 |
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| Bibliography: | Monte Carlo ; device simulating for semiconductor; many integrated core ; effective potential method; particle free flight FANG Min-quan ,ZHANG Wei-min ,ZHANG Li-lun , ZENG Lang ,LIU Xiao-yan ,YIN Long-xiang（1. College of Computer, National University of Defense Technology,Changsha 410073; 2. National Supercomputing Center in Guangzhou,Guangzhou 510006; 3. School of Electric and Information Engineering,Beihang University,Beijing 100091; 4. Spintronics Interdisciplinary Center,Beihang University,Beijing 100091, 5. Institute of Microelectronics, Peking University, Beijing 100871, China） 43-1258/TP 3D Monte Carlo simulation for semiconductor devices consumes long time. Especially when grids are growing and particles are increasing, the computing scale becomes very large. By analy- zing the hotspots and the second level parallelism, the parallel scheme of the Effective Potential Method on Many Integrated Core is presented; Parallel schemes of particle free fighting, simulation information statistics and surface roug |
| ISSN: | 1007-130X |
| DOI: | 10.3969/j.issn.1007-130X.2015.04.001 |