Coulomb engineering of two-dimensional Mott materials

Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating th...

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Published inNPJ 2D materials and applications Vol. 7; no. 1; p. 47
Main Authors van Loon, Erik G. C. P., Schüler, Malte, Springer, Daniel, Sangiovanni, Giorgio, Tomczak, Jan M., Wehling, Tim O.
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 2023
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Abstract Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.
AbstractList Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.
Abstract Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.
Abstract Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.
ArticleNumber 47
Author Schüler, Malte
Sangiovanni, Giorgio
van Loon, Erik G. C. P.
Springer, Daniel
Wehling, Tim O.
Tomczak, Jan M.
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  surname: van Loon
  fullname: van Loon, Erik G. C. P.
  email: erik.van_loon@teorfys.lu.se
  organization: Mathematical Physics Division, Department of Physics, Lund University, Institut für Theoretische Physik, Universität Bremen, Bremen Center for Computational Materials Science, Universität Bremen
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  organization: Institute of Solid State Physics, TU Wien, Institute of Advanced Research in Artificial Intelligence, IARAI
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  surname: Sangiovanni
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  givenname: Jan M.
  orcidid: 0000-0003-1581-8799
  surname: Tomczak
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  surname: Wehling
  fullname: Wehling, Tim O.
  organization: I. Institute of Theoretical Physics, University of Hamburg, The Hamburg Centre for Ultrafast Imaging
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Issue 1
Keywords Electronic properties and materials
Surfaces, interfaces and thin films
Language English
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Snippet Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between...
Abstract Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction...
Abstract Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction...
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SubjectTerms 639/766/119/544
639/766/119/995
Chemistry and Materials Science
Condensed Matter Physics
Den kondenserade materiens fysik
Dielectric properties
Dielectric strength
Electrons
Energy
Engineering
Fysik
Insulation
Many body problem
Materials Science
Mathematical analysis
Nanotechnology
Natural Sciences
Naturvetenskap
Physical Sciences
Physics
Spectrum analysis
Surfaces and Interfaces
Thin Films
Two dimensional materials
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Title Coulomb engineering of two-dimensional Mott materials
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