Coulomb engineering of two-dimensional Mott materials
Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating th...
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Published in | NPJ 2D materials and applications Vol. 7; no. 1; p. 47 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
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Nature Publishing Group UK
2023
Nature Publishing Group Nature Portfolio |
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Abstract | Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally. |
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AbstractList | Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally. Abstract Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally. Abstract Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally. |
ArticleNumber | 47 |
Author | Schüler, Malte Sangiovanni, Giorgio van Loon, Erik G. C. P. Springer, Daniel Wehling, Tim O. Tomczak, Jan M. |
Author_xml | – sequence: 1 givenname: Erik G. C. P. orcidid: 0000-0002-5436-290X surname: van Loon fullname: van Loon, Erik G. C. P. email: erik.van_loon@teorfys.lu.se organization: Mathematical Physics Division, Department of Physics, Lund University, Institut für Theoretische Physik, Universität Bremen, Bremen Center for Computational Materials Science, Universität Bremen – sequence: 2 givenname: Malte orcidid: 0000-0002-8472-3745 surname: Schüler fullname: Schüler, Malte organization: Institut für Theoretische Physik, Universität Bremen, Bremen Center for Computational Materials Science, Universität Bremen – sequence: 3 givenname: Daniel orcidid: 0000-0001-8588-3794 surname: Springer fullname: Springer, Daniel organization: Institute of Solid State Physics, TU Wien, Institute of Advanced Research in Artificial Intelligence, IARAI – sequence: 4 givenname: Giorgio orcidid: 0000-0003-2218-2901 surname: Sangiovanni fullname: Sangiovanni, Giorgio organization: Institut für Theoretische Physik und Astrophysik and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg – sequence: 5 givenname: Jan M. orcidid: 0000-0003-1581-8799 surname: Tomczak fullname: Tomczak, Jan M. organization: Institute of Solid State Physics, TU Wien, Department of Physics, King’s College London, Strand – sequence: 6 givenname: Tim O. surname: Wehling fullname: Wehling, Tim O. organization: I. Institute of Theoretical Physics, University of Hamburg, The Hamburg Centre for Ultrafast Imaging |
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Snippet | Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between... Abstract Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction... Abstract Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction... |
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SubjectTerms | 639/766/119/544 639/766/119/995 Chemistry and Materials Science Condensed Matter Physics Den kondenserade materiens fysik Dielectric properties Dielectric strength Electrons Energy Engineering Fysik Insulation Many body problem Materials Science Mathematical analysis Nanotechnology Natural Sciences Naturvetenskap Physical Sciences Physics Spectrum analysis Surfaces and Interfaces Thin Films Two dimensional materials |
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Title | Coulomb engineering of two-dimensional Mott materials |
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