Coulomb engineering of two-dimensional Mott materials

• Published in: NPJ 2D materials and applications Vol. 7; no. 1; p. 47
• Main Authors: van Loon, Erik G. C. P., Schüler, Malte, Springer, Daniel, Sangiovanni, Giorgio, Tomczak, Jan M., Wehling, Tim O.
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 2023; Nature Publishing Group; Nature Portfolio
• Subjects: 639/766/119/544; 639/766/119/995; Chemistry and Materials Science; Condensed Matter Physics; Den kondenserade materiens fysik; Dielectric properties; Dielectric strength; Electrons; Energy; Engineering; Fysik; Insulation; Many body problem; Materials Science; Mathematical analysis; Nanotechnology; Natural Sciences; Naturvetenskap; Physical Sciences; Physics; Spectrum analysis; Surfaces and Interfaces; Thin Films; Two dimensional materials; Electronic properties and materials; Surfaces, interfaces and thin films
• ISSN: 2397-7132; 2397-7132
• DOI: 10.1038/s41699-023-00408-x

Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.