Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

A multi-deposition multi-annealing technique （MDMA） is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device＇s performance. In this paper, we systematically investigate the electrical parameters and the time-de...

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Published inChinese physics B Vol. 24; no. 11; pp. 464 - 467
Main Author 王艳蓉 杨红 徐昊 王晓磊 罗维春 祁路伟 张淑祥 王文武 闫江 朱慧珑 赵超 陈大鹏 叶甜春
Format Journal Article
LanguageEnglish
Published 01.11.2015
Subjects
Annealing
Deposition
Dielectric breakdown
Equivalence
Gates
Leakage current
MOSFET
MOSFETs
Oxides
PMOS
时间依赖性
沉积
电击穿特性
等效氧化层厚度
退火技术
金属栅
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/24/ll/117306

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Summary:A multi-deposition multi-annealing technique （MDMA） is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device＇s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown （TDDB） characteristics of positive channel metal oxide semiconductor （PMOS） under different MDMA process conditions, including the depo- sition/annealing （D＆A） cycles, the D＆A time, and the total annealing time. The results show that the increases of the number of D＆A cycles （from 1 to 2） and D＆A time （from 15 s to 30 s） can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail （TTF） at 63.2% increases by about several times. However, too many D＆A cycles （such as 4 cycles） make the equivalent oxide thickness （EOT） increase by about 1A and the TTF of PMOS worsen. Moreover, different D＆A times and numbers of D＆A cycles induce different breakdown mechanisms.
Bibliography:A multi-deposition multi-annealing technique （MDMA） is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device＇s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown （TDDB） characteristics of positive channel metal oxide semiconductor （PMOS） under different MDMA process conditions, including the depo- sition/annealing （D＆A） cycles, the D＆A time, and the total annealing time. The results show that the increases of the number of D＆A cycles （from 1 to 2） and D＆A time （from 15 s to 30 s） can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail （TTF） at 63.2% increases by about several times. However, too many D＆A cycles （such as 4 cycles） make the equivalent oxide thickness （EOT） increase by about 1A and the TTF of PMOS worsen. Moreover, different D＆A times and numbers of D＆A cycles induce different breakdown mechanisms.
11-5639/O4
high-k/metal gate, time dependent dielectric breakdown, multi-deposition multi-annealing
ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/24/ll/117306