Modification of the Surface Topography and Composition of Ultrafine and Coarse Grained Titanium by Chemical Etching

• Published in: Nanomaterials (Basel, Switzerland) Vol. 7; no. 1; p. 15
• Main Authors: Nazarov, Denis V, Zemtsova, Elena G, Solokhin, Alexandr Yu, Valiev, Ruslan Z, Smirnov, Vladimir M
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 01.01.2017; MDPI
• Subjects: Biocompatibility; chemical etching; Chemical vapor deposition; Etching; Mechanical properties; Morphology; Nanomaterials; Nanostructure; roughness; Scanning electron microscopy; surface; Surface chemistry; Titanium; titanium implants; Topography; Transplants & implants; UFG titanium; Ultrafines; chemical etching; titanium implants; UFG titanium; surface; roughness
• ISSN: 2079-4991; 2079-4991
• DOI: 10.3390/nano7010015

In this study, we present the detailed investigation of the influence of the etching medium (acidic or basic Piranha solutions) and the etching time on the morphology and surface relief of ultrafine grained (UFG) and coarse grained (CG) titanium. The surface relief and morphology have been studied by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), and the spectral ellipsometry. The composition of the samples has been determined by X-ray fluorescence analysis (XRF) and X-ray Photoelectron Spectroscopy (XPS). Significant difference in the etching behavior of UFG and CG titanium has been found. UFG titanium exhibits higher etching activity independently of the etching medium. Formed structures possess higher homogeneity. The variation of the etching medium and time leads to micro-, nano-, or hierarchical micro/nanostructures on the surface. Significant difference has been found between surface composition for UFG titanium etched in basic and acidic Piranha solution. Based on the experimental data, the possible reasons and mechanisms are considered for the formation of nano- and microstructures. The prospects of etched UFG titanium as the material for implants are discussed.