Insulators for 2D nanoelectronics: the gap to bridge

• Published in: Nature communications Vol. 11; no. 1; p. 3385
• Main Authors: Illarionov, Yury Yu, Knobloch, Theresia, Jech, Markus, Lanza, Mario, Akinwande, Deji, Vexler, Mikhail I., Mueller, Thomas, Lemme, Max C., Fiori, Gianluca, Schwierz, Frank, Grasser, Tibor
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 07.07.2020; Nature Publishing Group; Nature Portfolio
• Subjects: 639/301/357/1018; 639/925/927/1007; Boron; Boron nitride; Construction materials; Crystal defects; Electronic devices; Electronic equipment; Electronics industry; Humanities and Social Sciences; Insulators; Interfaces; multidisciplinary; Nanoelectronics; Nanotechnology devices; Oxides; Review; Review Article; Science; Science (multidisciplinary); Semiconductors; State-of-the-art reviews; Transistors; Two dimensional materials
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/s41467-020-16640-8

Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron nitride does not meet required dielectric specifications. The list of suitable alternative insulators is currently very limited. Thus, a radically different mindset with respect to suitable insulators for 2D technologies may be required. We review possible solution scenarios like the creation of clean interfaces, production of native oxides from 2D semiconductors and more intensive studies on crystalline insulators. The lack of scalable, high-quality insulators is a major problem hindering the progress on electronic devices built from 2D materials. Here, the authors review the current state-of-the-art and the future prospects of suitable insulators for 2D technologies.