Single crystal hybrid perovskite field-effect transistors

The fields of photovoltaics, photodetection and light emission have seen tremendous activity in recent years with the advent of hybrid organic-inorganic perovskites. Yet, there have been far fewer reports of perovskite-based field-effect transistors. The lateral and interfacial transport requirement...

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Published inNature communications Vol. 9; no. 1; pp. 5354 - 10
Main Authors Yu, Weili, Li, Feng, Yu, Liyang, Niazi, Muhammad R., Zou, Yuting, Corzo, Daniel, Basu, Aniruddha, Ma, Chun, Dey, Sukumar, Tietze, Max L., Buttner, Ulrich, Wang, Xianbin, Wang, Zhihong, Hedhili, Mohamed N., Guo, Chunlei, Wu, Tom, Amassian, Aram
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 17.12.2018
Nature Publishing Group
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Summary:The fields of photovoltaics, photodetection and light emission have seen tremendous activity in recent years with the advent of hybrid organic-inorganic perovskites. Yet, there have been far fewer reports of perovskite-based field-effect transistors. The lateral and interfacial transport requirements of transistors make them particularly vulnerable to surface contamination and defects rife in polycrystalline films and bulk single crystals. Here, we demonstrate a spatially-confined inverse temperature crystallization strategy which synthesizes micrometre-thin single crystals of methylammonium lead halide perovskites MAPbX 3 (X = Cl, Br, I) with sub-nanometer surface roughness and very low surface contamination. These benefit the integration of MAPbX 3 crystals into ambipolar transistors and yield record, room-temperature field-effect mobility up to 4.7 and 1.5 cm 2  V −1  s −1 in p and n channel devices respectively, with 10 4 to 10 5 on-off ratio and low turn-on voltages. This work paves the way for integrating hybrid perovskite crystals into printed, flexible and transparent electronics. The methylammonium lead halide perovskites have shown excellent optoelectronic properties but the field-effect transistors are much less studied. Here Yu et al. synthesize micrometer-thin crystals of perovskites with low surface contamination and make ambipolar transistor devices with high mobilities.
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ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-018-07706-9