An orbitally derived single-atom magnetic memory

A magnetic atom epitomizes the scaling limit for magnetic information storage. Individual atomic spins have recently exhibited magnetic remanence, a requirement for magnetic memory. However, such memory has been only realized on thin insulating surfaces, removing potential tunability via electronic...

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Published inNature communications Vol. 9; no. 1; pp. 3904 - 8
Main Authors Kiraly, Brian, Rudenko, Alexander N., van Weerdenburg, Werner M. J., Wegner, Daniel, Katsnelson, Mikhail I., Khajetoorians, Alexander A.
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 25.09.2018
Nature Publishing Group
Nature Portfolio
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Summary:A magnetic atom epitomizes the scaling limit for magnetic information storage. Individual atomic spins have recently exhibited magnetic remanence, a requirement for magnetic memory. However, such memory has been only realized on thin insulating surfaces, removing potential tunability via electronic gating or exchange-driven magnetic coupling. Here, we show a previously unobserved mechanism for single-atom magnetic storage based on bistability in the orbital population, or so-called valency, of an individual Co atom on semiconducting black phosphorus (BP). Ab initio calculations reveal that distance-dependent screening from the BP surface stabilizes the two distinct valencies, each with a unique orbital population, total magnetic moment, and spatial charge density. Excellent correspondence between the measured and predicted charge densities reveal that such orbital configurations can be accessed and manipulated without a spin-sensitive readout mechanism. This orbital memory derives stability from the energetic barrier to atomic relaxation, demonstrating the potential for high-temperature single-atom information storage. Single-atom storage can dramatically exceed the limit of traditional high-density memory devices but is challenging. Here the authors show the bistability in the orbital configuration of a single Co atom on black phosphorus which can be accessed, manipulated and has potential for high-temperature single-atom information storage.
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ISSN:2041-1723
2041-1723
DOI:10.1038/s41467-018-06337-4