Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics

To minimize the lattice thermal conductivity in thermoelectrics, strategies typically focus on the scattering of low-frequency phonons by interfaces and high-frequency phonons by point defects. In addition, scattering of mid-frequency phonons by dense dislocations, localized at the grain boundaries,...

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Published inNature communications Vol. 8; no. 1; p. 13828
Main Authors Chen, Zhiwei, Ge, Binghui, Li, Wen, Lin, Siqi, Shen, Jiawen, Chang, Yunjie, Hanus, Riley, Snyder, G. Jeffrey, Pei, Yanzhong
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 04.01.2017
Nature Publishing Group
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Summary:To minimize the lattice thermal conductivity in thermoelectrics, strategies typically focus on the scattering of low-frequency phonons by interfaces and high-frequency phonons by point defects. In addition, scattering of mid-frequency phonons by dense dislocations, localized at the grain boundaries, has been shown to reduce the lattice thermal conductivity and improve the thermoelectric performance. Here we propose a vacancy engineering strategy to create dense dislocations in the grains. In Pb 1− x Sb 2 x /3 Se solid solutions, cation vacancies are intentionally introduced, where after thermal annealing the vacancies can annihilate through a number of mechanisms creating the desired dislocations homogeneously distributed within the grains. This leads to a lattice thermal conductivity as low as 0.4 Wm −1  K −1 and a high thermoelectric figure of merit, which can be explained by a dislocation scattering model. The vacancy engineering strategy used here should be equally applicable for solid solution thermoelectrics and provides a strategy for improving zT . In thermoelectric materials, dislocations at grain boundaries can be used to scatter midfrequency phonons. Here, Chen et al . use vacancy engineering and thermal annealing to generate dislocations homogeneously within the crystalline grains and obtain good figures of merit for PbSe-based thermoelectrics.
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SC0001299
USDOE Office of Science (SC)
These authors contributed equally to this work
ISSN:2041-1723
2041-1723
DOI:10.1038/ncomms13828