Zinc oxide -From dilute magnetic doping to spin transport

• Published in: Physica Status Solidi. B: Basic Solid State Physics Vol. 251; no. 9; pp. 1700 - 1709
• Main Authors: Opel, Matthias, Goennenwein, Sebastian T. B., Althammer, Matthias, Nielsen, Karl-Wilhelm, Karrer-Müller, Eva-Maria, Bauer, Sebastian, Senn, Konrad, Schwark, Christoph, Weier, Christian, Güntherodt, Gernot, Beschoten, Bernd, Gross, Rudolf
• Format: Journal Article
• Language: English
• Published: Blackwell Publishing Ltd 01.09.2014
• Subjects: dilute magnetic semiconductors; Dilution; Doping; Ferromagnetism; Nanostructure; Pumps; Semiconductors; spin dephasing; spin transport; Spintronics; Zinc oxide
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/pssb.201350230

During the past years, there has been renewed interest in the wide‐bandgap II–VI semiconductor ZnO, triggered by promising prospects for spintronic applications. First, ferromagnetism was predicted for dilute magnetic doping. In a comprehensive investigation of ZnO:Co thin films based on the combined measurement of macroscopic and microscopic properties, we find no evidence for carrier‐mediated itinerant ferromagnetism. Phase‐pure, crystallographically excellent ZnO:Co is uniformly paramagnetic. Superparamagnetism arises when phase separation or defect formation occurs, due to nanometer‐sized metallic precipitates. Other compounds like ZnO:(Li,Ni) and ZnO:Cu do not exhibit indication of ferromagnetism. Second, its small spin–orbit coupling and correspondingly large spin coherence length makes ZnO suitable for transporting or manipulating spins in spintronic devices. From optical pump/optical probe experiments, we find a spin dephasing time of the order of 15 ns at low temperatures, which we attribute to electrons bound to Al donors. In all‐electrical magnetotransport measurements, we successfully create and detect a spin‐polarized ensemble of electrons and transport this spin information across several nanometers. We derive a spin lifetime of 2.6 ns for these itinerant spins at low temperatures, corresponding well to results from an electrical pump/optical probe experiment. The wide‐bandgap semiconductor ZnO is a promising material with regard to dilute magnetic doping and spintronic applications. Opel et al. review the substitution with magnetic and non‐magnetic ions, identify the formation of magnetic clusters, and demonstrate how extrinsic effects can obscure the magnetic measurements. The authors further demonstrate electrical spin injection into ZnO via optical and electrical detection schemes.