Synthesis, microstructure and photoluminescence of well-aligned ZnO nanorods on Si substrate

Well-aligned zinc oxide (ZnO) nanorods were densely grown on Si substrate using ZnO thin-film seed layer without any catalysts and/or additives by a simple solid–vapour phase thermal sublimation technique. The growth mechanism can be interpreted as self-catalyst of zinc particles based on vapour–sol...

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Published inScience and technology of advanced materials Vol. 8; no. 6; pp. 443 - 447
Main Authors Miao, L., Ieda, Y., Tanemura, S., Cao, Y.G., Tanemura, M., Hayashi, Y., Toh, S., Kaneko, K.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.09.2007
Taylor & Francis
IOP Publishing
Taylor & Francis Group
Subjects
Crystals
Emission
Growth from vapour
Nanorods
Nanostructure
Semiconducting materials
Silicon substrates
Sublimation
Zinc
Zinc compounds
Zinc oxide
Growth from vapour
Zinc compounds
Semiconducting materials
Nanostructure
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Summary:Well-aligned zinc oxide (ZnO) nanorods were densely grown on Si substrate using ZnO thin-film seed layer without any catalysts and/or additives by a simple solid–vapour phase thermal sublimation technique. The growth mechanism can be interpreted as self-catalyst of zinc particles based on vapour–solid (VS) mechanism. High-resolution transmission electron microscopy (HRTEM) image and selected area electron diffraction (SAED) pattern confirmed that the single-crystalline growth of the nanorods were preferentially along c-axis of hexagonal crystal system. High-crystal quality ZnO nanorods with strong near band edge emission centred at 380 nm can be achieved on Si substrate by the introduction of sufficient oxygen during the nanorod growth processing.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1468-6996
1878-5514
DOI:10.1016/j.stam.2007.02.012