基于Q-MMIC技术的W波段低成本PIN管开关

采用低成本方法设计了一款W波段单刀单掷开关.通过在单独加工的石英基片无源电路上安装倒装PIN管,获得了一款W波段准毫米波单片（Q-MMIC）开关.为了获得低损耗、高隔离度性能,开关设计中采用了3-D PIN管模型和电路补偿结构.测试结果表明开关在88 GHz时插入损耗最小,最小值为0.5 dB;在80~101 GHz频率范围内,开关导通时的插入损耗小于2 dB;在84~104 GHz频率范围内,开关隔离度大于30 dB.整个开关电路尺寸为1.5 mm×3.0 mm....

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Bibliographic Details
Published in红外与毫米波学报 Vol. 34; no. 6; pp. 680 - 683
Main Author 许正彬 徐杰 钱澄
Format Journal Article
LanguageChinese
Published 东南大学毫米波国家重点实验室,江苏南京,210096 2015
Subjects
PIN管
W波段
准毫米波单片
开关
W波段
quasi-monolithic millimeter-wave integrated circuit(Q-MMIC)
W-band
准毫米波单片
开关
PIN管
PIN diode
switch
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ISSN1001-9014
DOI10.11972/j.issn.1001-9014.2015.06.008

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Summary:采用低成本方法设计了一款W波段单刀单掷开关.通过在单独加工的石英基片无源电路上安装倒装PIN管,获得了一款W波段准毫米波单片（Q-MMIC）开关.为了获得低损耗、高隔离度性能,开关设计中采用了3-D PIN管模型和电路补偿结构.测试结果表明开关在88 GHz时插入损耗最小,最小值为0.5 dB;在80~101 GHz频率范围内,开关导通时的插入损耗小于2 dB;在84~104 GHz频率范围内,开关隔离度大于30 dB.整个开关电路尺寸为1.5 mm×3.0 mm.
Bibliography:quasi-monolithic millimeter-wave integrated circuit（Q-MMIC）; switch; PIN diode; W-band
A high performance PIN diode single-pole-single-throw（ SPST） switch for W-band application using a low cost approach was developed. By utilizing flip-chip PIN diodes mounted onto a separately fabricated passive circuit having a quartz substrate,a W-band quasi-monolithic millimeter-wave integrated circuit（ Q-MMIC） switch was achieved. A 3-D PIN diode model and a compensation structure were adopted to acquire a low loss and high isolation switch. The measurement results show the minimum insertion loss is about 0. 5 dB at 88 GHz and less than2 dB over the frequency range of 80 to 101 GHz. The isolation is greater than 30 dB from 84 to 105 GHz. The total size of the switch is 1. 5 mm × 3. 0 mm.
XU Zheng-Bin, XU Jie, QIAN Cheng （ State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China）
31-1577/TN
ISSN:1001-9014
DOI:10.11972/j.issn.1001-9014.2015.06.008