晶体管场环终端技术的优化设计及应用

主要研究晶体管中浮空场环的技术原理和设计优化及其在实际应用中对晶体管耐压性能的影响。在实际产品版图设计中采用了浮空场环设计并通过优化场环间距来满足晶体管的高耐压要求，并通过Silvaco软件进行工艺和器件仿真。根据仿真结果及理论计算进行浮空场环优化设计，并通过实际流片验证浮空场环对晶体管耐压性能的提高效果。...

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Bibliographic Details
Published in电子技术应用 Vol. 43; no. 1; pp. 24 - 27
Main Author 李照 张战国 高博 常正阳 黄山圃
Format Journal Article
LanguageChinese
Published 航天科技集团九院七七一研究所,陕西西安,710000 2017
Subjects
场环优化
场环间距
浮空场环
高耐压
场环优化
浮空场环
floating field ring
场环间距
high withstand voltage
高耐压
field ring spacing
field ring optimization
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ISSN0258-7998
DOI10.16157/j.issn.0258-7998.2017.01.006

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Summary:主要研究晶体管中浮空场环的技术原理和设计优化及其在实际应用中对晶体管耐压性能的影响。在实际产品版图设计中采用了浮空场环设计并通过优化场环间距来满足晶体管的高耐压要求，并通过Silvaco软件进行工艺和器件仿真。根据仿真结果及理论计算进行浮空场环优化设计，并通过实际流片验证浮空场环对晶体管耐压性能的提高效果。
Bibliography:floating field ring;high withstand voltage;field ring optimization;field ring spacing
Li Zhao, Zhang Zhanguo, Gao Bo, Chang Zhengyang, Huang Shanpu （The 771 Institute of the Ninth Research Institute of Aerospace Science and Technology Corporation,Xi＇an 710000,China）
11-2305/TN
This paper mainly studies the transistor floating field ring technology principle and design optimization and its effect in the actual application of the transistor voltage performance. In this paper, the actual product layout design is adopted in the design of floating field ring and by optimizing the field ring spacing to meet the requirements of high voltage transistors, and the process and device simulation are realized by Silvaco software. Some optimization designs are made with the floating field ring according to the simulation results and theoretical calculation, and the improvement on the transistor voltage performance is verified through the actual product results.
ISSN:0258-7998
DOI:10.16157/j.issn.0258-7998.2017.01.006