布拉格反射波导光子晶体宽光谱量子阱激光器

半导体宽谱激光在传感、光谱学等领域有着重要的应用.传统半导体宽谱激光器主要采用宽增益材料和全反射波导,采用简单量子阱结构制备宽谱激光器一直是个难题.作者首次证明了一种基于布拉格反射波导一维光子晶体的新型量子阱宽谱激光器,其结构主要包括In Ga As/Ga As量子阱和上下布拉格反射镜,通过偏离解理实现激光输出.研究发现在偏离角7°时,器件展现宽谱超辐射发光二极管特性,4.4°偏离角时实现了宽光谱激光输出,光谱宽度达到33.7 nm,连续输出功率36 m W.本研究为探索新型量子阱宽谱激光器提出了一种新的技术途径....

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Published in红外与毫米波学报 Vol. 36; no. 3; pp. 349 - 353
Main Author 李珍 汪丽杰 侯冠宇 王涛 卢泽丰 陆寰宇 孙宝瑞 丁国龙 佟存柱 李洪祚
Format Journal Article
LanguageChinese
Published 长春理工大学电子信息工程学院,吉林长春130022 2017
中国科学院长春光学精密机械与物理研究所,吉林长春130033%中国科学院长春光学精密机械与物理研究所,吉林长春,130033%长春机械科学研究院有限公司,吉林长春,130103%长春理工大学电子信息工程学院,吉林长春,130022
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ISSN1001-9014
DOI10.11972/j.issn.1001-9014.2017.03.017

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Summary:半导体宽谱激光在传感、光谱学等领域有着重要的应用.传统半导体宽谱激光器主要采用宽增益材料和全反射波导,采用简单量子阱结构制备宽谱激光器一直是个难题.作者首次证明了一种基于布拉格反射波导一维光子晶体的新型量子阱宽谱激光器,其结构主要包括In Ga As/Ga As量子阱和上下布拉格反射镜,通过偏离解理实现激光输出.研究发现在偏离角7°时,器件展现宽谱超辐射发光二极管特性,4.4°偏离角时实现了宽光谱激光输出,光谱宽度达到33.7 nm,连续输出功率36 m W.本研究为探索新型量子阱宽谱激光器提出了一种新的技术途径.
Bibliography:Semiconductor lasers with broad spectra are crucial for sensing, spectroscopy and biomedical imaging, etc. Currently, the broadband semiconductor lasers are majority based on the broad gain ma- terial and total interface reflection (TIR) waveguide. It is still a challenge to realize the broadband semiconductor lasers based on the simple and mature quantum well (QW) material. In this paper, a new type broadband QW laser using Bragg reflection waveguide with a deviation angle from cleaving crystal faces was demonstrated. The device consists of the InGaAs/GaAs QWs, top and bottom Bragg reflectors. It was found that it shows the characteristics of supeduminescent diode (SLD) with a spec- trum width of 135 nm for the device with a deviation angle of 7°. The spectrum width of 33.7 nm was achieved with an emission power of 36 mW from one facet for a deviation angle of 4.4°. This work supplies a new possible approach for the development of high performance QW broadband lasers.
LI Zhen, WANG Li-Jie2 HOU Guan-Yu2 WANG T
ISSN:1001-9014
DOI:10.11972/j.issn.1001-9014.2017.03.017