氮掺杂二氧化钛-氧化镍双层薄膜的光电致色特性

以金属钛为靶材、O2/N2/Ar混合气氛为溅射气体,在导电玻璃(ITO)表面磁控溅射一层薄膜,再经300—500℃退火处理制备了氮掺杂TiO2薄膜.采用X射线衍射(XRD)、X光电子能谱(XPS)、扫描电子显微镜(SEM)和紫外.可见吸收光谱等对薄膜的微观结构、光学特性和光电化学性能等进行了研究.进而采用化学沉积的方法在TiO2-xNx薄膜表面沉积上一层多孔NiO薄膜,研究表明,制备的ITO/TiO2-xNx/NiO双层薄膜具有明显的光电致色特性,400℃退火处理的氮掺杂TiO。薄膜具有最高的光电流响应,经氙灯照射1h后,薄膜从无色变成棕色,500nm波长处光透过率从79.0%下降至12.6%...

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Published inWuli huaxue xuebao Vol. 26; no. 2; pp. 299 - 303
Main Author 蒋磊 黄辉 王春涛 张文魁 甘永平 陶新永
Format Journal Article
LanguageChinese
Published 浙江工业大学化学工程与材料学院,杭州,310014%浙江海洋学院机电工程学院,浙江,舟山,316000 2010
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Abstract 以金属钛为靶材、O2/N2/Ar混合气氛为溅射气体,在导电玻璃(ITO)表面磁控溅射一层薄膜,再经300—500℃退火处理制备了氮掺杂TiO2薄膜.采用X射线衍射(XRD)、X光电子能谱(XPS)、扫描电子显微镜(SEM)和紫外.可见吸收光谱等对薄膜的微观结构、光学特性和光电化学性能等进行了研究.进而采用化学沉积的方法在TiO2-xNx薄膜表面沉积上一层多孔NiO薄膜,研究表明,制备的ITO/TiO2-xNx/NiO双层薄膜具有明显的光电致色特性,400℃退火处理的氮掺杂TiO。薄膜具有最高的光电流响应,经氙灯照射1h后,薄膜从无色变成棕色,500nm波长处光透过率从79.0%下降至12.6%.
AbstractList O646; 以金属钛为靶材、O_2/N_2/Ar混合气氛为溅射气体,在导电玻璃(ITO)表面磁控溅射一层薄膜,再经300-500 ℃退火处理制备了氮掺杂TiO_2薄膜.采用x射线衍射(XRD)、X光电子能谱(XPS)、扫描电子显微镜(SEM)和紫外-可见吸收光谱等对薄膜的微观结构、光学特性和光电化学性能等进行了研究.进而采用化学沉积的方法在TiO_(2-x)N_x薄膜表面沉积上一层多孔NiO薄膜,研究表明,制备的ITO/TiO_(2-x)N_x/NiO双层薄膜具有明显的光电致色特性,400℃退火处理的氮掺杂TiO_2薄膜具有最高的光电流响应,经氙灯照射1 h后,薄膜从无色变成棕色,500砌波长处光透过率从79.0%下降至12.6%.
以金属钛为靶材、O2/N2/Ar混合气氛为溅射气体,在导电玻璃(ITO)表面磁控溅射一层薄膜,再经300—500℃退火处理制备了氮掺杂TiO2薄膜.采用X射线衍射(XRD)、X光电子能谱(XPS)、扫描电子显微镜(SEM)和紫外.可见吸收光谱等对薄膜的微观结构、光学特性和光电化学性能等进行了研究.进而采用化学沉积的方法在TiO2-xNx薄膜表面沉积上一层多孔NiO薄膜,研究表明,制备的ITO/TiO2-xNx/NiO双层薄膜具有明显的光电致色特性,400℃退火处理的氮掺杂TiO。薄膜具有最高的光电流响应,经氙灯照射1h后,薄膜从无色变成棕色,500nm波长处光透过率从79.0%下降至12.6%.
Abstract_FL N-doped TiO_2 films were prepared on indium tin oxide(ITO) conducting glass by dc-reactive magnetron sputtering using a Ti target in an O_2/N_2/Ar mixture gas in combination with heat-treatment at 300-500 ℃. The microstructure, optical and photoelectrochemical properties of the as-formed films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy(XPS), scanning electron microscopy(SEM) and UV-Vis transmittance spectrum. Highly porous NiO was deposited onto the N-doped TiO_2 layer by chemical bath deposition to obtain ITO/ TiO_(2-x)N_x/NiO bilayer thin films and they exhibited excellent and noticeable photoelectrochromism. The TiO_(2-x)N_x film annealed at 400 ℃ showed the highest photocurrent response. The color of films changed from colorless to brown and the transmittance varied from 79.0% to 12.6% at 500 nm after 1 h of irradiation.
Author 蒋磊 黄辉 王春涛 张文魁 甘永平 陶新永
AuthorAffiliation 浙江工业大学化学工程与材料学院,杭州310014 浙江海洋学院机电工程学院,浙江舟山316000
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Author_FL GAN Yong-Ping
ZHANG Wen-Kui
HUANG Hui
JIANG Lei
WANG Chun-Tao
TAO Xin-Yong
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DocumentTitleAlternate Photoelectrochromic Properties of TiO2-xNx/NiO Bilayer Thin Films
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Issue 2
Keywords 光电致色
NiO
N-dopedTiO_2
薄膜
氮掺杂TiO_2
Photoelectrochemicalproperty
Photoelectrochromism
氧化镍
光电化学性能
Thin film
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Notes 11-1892/06
Photoelectrochromism; N-doped TiO2; NiO; Photoelectrochemical property; Thin film
NiO
Photoelectrochemical property
N-doped TiO2
Photoelectrochromism
O646
Thin film
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Publisher 浙江工业大学化学工程与材料学院,杭州,310014%浙江海洋学院机电工程学院,浙江,舟山,316000
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O646; 以金属钛为靶材、O_2/N_2/Ar混合气氛为溅射气体,在导电玻璃(ITO)表面磁控溅射一层薄膜,再经300-500...
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StartPage 299
SubjectTerms 光电化学性能
光电致色
氧化镍
氮掺杂TiO2
薄膜
Title 氮掺杂二氧化钛-氧化镍双层薄膜的光电致色特性
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