基于两级di/dt检测IGBT模块短路策略

为了解决传统VCE在检测大功率绝缘栅双极型晶体管（IGBT）模块的短路故障时存在的问题,在分析了IGBT短路特性的基础上,提出了一种基于两级电流变化率（di/dt）检测IGBT两类短路故障的策略。该策略可以使驱动器更早地采取保护措施,限制IGBT的短路电流和短路功耗,减小关断尖峰电压。基于3300 V/1200 A IGBT模块的短路实验结果证明了该策略的有效性和可行性。...

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Bibliographic Details
Published in电子技术应用 Vol. 42; no. 6; pp. 49 - 51
Main Author 王亮亮 杨媛 高勇 文阳 马丽
Format Journal Article
LanguageChinese
Published 西安工程大学电子信息学院,陕西西安710048%西安理工大学自动化与信息工程学院,陕西西安,710048 2016
西安理工大学自动化与信息工程学院,陕西西安710048
Subjects
IGBT
检测电路
短路特性
short-circuit characteristic
IGBT
detection circuit
检测电路
短路特性
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ISSN0258-7998
DOI10.16157/j.issn.0258-7998.2016.06.013

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Summary:为了解决传统VCE在检测大功率绝缘栅双极型晶体管（IGBT）模块的短路故障时存在的问题,在分析了IGBT短路特性的基础上,提出了一种基于两级电流变化率（di/dt）检测IGBT两类短路故障的策略。该策略可以使驱动器更早地采取保护措施,限制IGBT的短路电流和短路功耗,减小关断尖峰电压。基于3300 V/1200 A IGBT模块的短路实验结果证明了该策略的有效性和可行性。
Bibliography:Wang Liangliang, Yang Yuan , Gao Yong, Wen Yang, Ma Li （1.Department of Electronics Engineering, Xi＇an University of Technology, Xi＇an 710048, China; 2. Department of Electronics ＆ Information, Xi＇ an Polytechnic University, Xi＇ an 710048, China）
In order to solve the existing problems of the traditional VCEin detecting the short- circuit fault of high power IGBT module, on the basis of analyzing IGBT short- circuit characteristic, a strategy based on two levels di / dt for detecting IGBT two types short- circuit fault is proposed in this paper. It enables the driver to take protective measures much earlier with limiting IGBT short circuit current and short circuit power consumption, reducing spike voltage. The results of short- circuit experiment based on 3300V / 1200A IGBT module prove that the strategy proposed is effective and feasible.
IGBT; short-circuit characteristic; detection circuit
11-2305/TN
ISSN:0258-7998
DOI:10.16157/j.issn.0258-7998.2016.06.013