Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition

• Published in: Molecules (Basel, Switzerland) Vol. 21; no. 12; p. 1636
• Main Authors: Liu, Juanjuan, Kutty, R Govindan, Liu, Zheng
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 29.11.2016; MDPI
• Subjects: Boron; Boron Compounds - chemical synthesis; Boron Compounds - chemistry; Chemical vapor deposition; Communication; Copper; Gases - chemistry; Graphene; Graphite - chemistry; Heat conductivity; hexagonal boron nitride; High temperature; Hot Temperature; Materials Testing - methods; Microscopy; Microscopy, Atomic Force; Nanostructures - chemistry; Nickel - chemistry; Photoelectron Spectroscopy; Spectrum analysis; Spectrum Analysis, Raman; Surface Properties; synthesis; Singapore; synthesis; chemical vapor deposition; hexagonal boron nitride
• ISSN: 1420-3049; 1420-3049
• DOI: 10.3390/molecules21121636

Hexagonal boron nitrite (h-BN) is an attractive material for many applications including electronics as a complement to graphene, anti-oxidation coatings, light emitters, etc. However, the synthesis of high-quality h-BN is still a great challenge. In this work, via controlled chemical vapor deposition, we demonstrate the synthesis of h-BN films with a controlled thickness down to atomic layers. The quality of as-grown h-BN is confirmed by complementary characterizations including high-resolution transition electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray photo-electron spectroscopy. This work will pave the way for production of large-scale and high-quality h-BN and its applications as well.