225 GHz三倍频器实用设计方法

结合国内现有的加工工艺水平,提出自偏置条件下的反向并联二极管对电路结构.不但解决了三倍频器偏置电路加工的难题,而且可以有效实现奇次倍频.同时,利用HFSS和ADS软件,以场路结合的方式准确模拟三倍频器的电特性,考虑到寄生参数引入的影响.设计完成以后,器件加工以及电装过程均在国内完成.测试结果表明在221 GHz处,有最大输出功率3.1 m W,在219~227 GHz频率范围内输出功率均大于2 m W.以上研究为今后设计高效率亚毫米波倍频器提供重要的参考价值....

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Published in红外与毫米波学报 Vol. 34; no. 2; pp. 190 - 195
Main Author 孟进 张德海 蒋长宏 赵鑫 姚常飞
Format Journal Article
LanguageChinese
Published 中国科学院空间科学与应用研究中心微波遥感重点实验室,北京100190 2015
中国科学院大学,北京100190%中国科学院空间科学与应用研究中心微波遥感重点实验室,北京,100190%南京电子器件研究所微波毫米波模块电路事业部,江苏南京,210016
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ISSN1001-9014
DOI10.11972/j.issn.1001-9014.2015.02.012

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Summary:结合国内现有的加工工艺水平,提出自偏置条件下的反向并联二极管对电路结构.不但解决了三倍频器偏置电路加工的难题,而且可以有效实现奇次倍频.同时,利用HFSS和ADS软件,以场路结合的方式准确模拟三倍频器的电特性,考虑到寄生参数引入的影响.设计完成以后,器件加工以及电装过程均在国内完成.测试结果表明在221 GHz处,有最大输出功率3.1 m W,在219~227 GHz频率范围内输出功率均大于2 m W.以上研究为今后设计高效率亚毫米波倍频器提供重要的参考价值.
Bibliography:tripler, varactor diode, self-bias, impedance matching
MENG Jin, ZHANG De-Hai , JIANG Chang-Hong , ZHAO Xin , YAO Chang-Fei ( 1. Key Lab. of Microwave Remote Sensing, Center for Space Science and Applied Research, Chinese/t.cademy of Sciences, Beijing I00190, China ; 2. University of Chinese Academy of Sciences,Beijing 100190, China; 3. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016)
31-1577/TN
According to the level of domestic processing technology at present, the circuit structure of anti-parallel diodes with self-bias was proposed. With this structure, not only the difficult problem of processing bias circuit can be solved, but also the odd-order frequency multiplication can be realized efficiently. At the meantime, co-simulation approach was used to simulate the electrical characteristic of the tripler by software HFSS and ADS, including the impact of the paras- tics. After designing, both the machining and electrical ins
ISSN:1001-9014
DOI:10.11972/j.issn.1001-9014.2015.02.012