能源并网系统中IGBT模块的温度场分布分析
温度影响着绝缘栅双极型晶体管（IGBT）模块的可靠性,采用传统的功电热耦合仿真模型只能测得IGBT模块离线情况下的一个结温,不能获得实际工况下芯片表面的温度场分布。在传统功率循环试验仿真的基础上进行改进,考虑到IGBT关断过程中的电压缓变,将该电压作为载荷,利用数值仿真软件ANSYS热分析环境,采用有限元分析方法得到模块温度场分布图,分析了温度场分布特征,可知温度较高区域出现在有源区的四周边沿处,这同以前的实验结果一致,证明仿真模型的正确性。以上分析对研究IGBT模块的可靠性和模块在线监测具有一定的指导意义。...
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| Published in | 电子技术应用 Vol. 43; no. 3; pp. 40 - 42 |
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| Main Author | |
| Format | Journal Article |
| Language | Chinese |
| Published |
上海电力学院电子与信息工程学院,上海,200090
2017
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0258-7998 |
| DOI | 10.16157/j.issn.0258-7998.2017.03.009 |
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| Summary: | 温度影响着绝缘栅双极型晶体管（IGBT）模块的可靠性,采用传统的功电热耦合仿真模型只能测得IGBT模块离线情况下的一个结温,不能获得实际工况下芯片表面的温度场分布。在传统功率循环试验仿真的基础上进行改进,考虑到IGBT关断过程中的电压缓变,将该电压作为载荷,利用数值仿真软件ANSYS热分析环境,采用有限元分析方法得到模块温度场分布图,分析了温度场分布特征,可知温度较高区域出现在有源区的四周边沿处,这同以前的实验结果一致,证明仿真模型的正确性。以上分析对研究IGBT模块的可靠性和模块在线监测具有一定的指导意义。 |
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| Bibliography: | interconnected system ; IGBT module ; MATLAB/Simulink ; ANSYS ; temperature field distribution Temperature affects the reliability of the insulated gate bipolar transistor （IGBT） module. The traditional power electric coupling simulation model can only be measured IGBT module offline cases a junction temperature, can＇t get the actual working conditions temperature field distribution on the surface of the chip. In this paper, on the basis of the traditional power cycling test simulation considering the voltage in the process of IGBT turn-off graded, the voltage as the load by using numerical simulation software ANSYS thermal analysis environment module temperature field distribution of achieved by finite element analysis method, analyzes the temperature field distribution characteristics of known high temperature area in all round the edge of the active region. The above analysis to study the reliability of the IGBT module and the module of online monitoring has certain guiding significance. Pi Kaiyun, Cui Haoya |
| ISSN: | 0258-7998 |
| DOI: | 10.16157/j.issn.0258-7998.2017.03.009 |