低维半导体异质结构光电探测材料及器件验证

面向国家“战略性先进电子材料”的发展目标,以国家重大战略需求,如全球气候观测、农林普查、国土资源探测、环境监测、深空探测和天文观测等领域的技术发展中面临的光探测器瓶颈问题为突破口,瞄准半导体材料及其光探测器正在朝全光谱覆盖、大面阵、高灵敏等方向快速发展的国际态势,开展低维半导体异质结构材料与光电器件研究,发展该体系材料人工设计精细调控的关键技术,推动多波段多种类型的光电探测器技术进步,促进我国经济、社会、国家安全及科学技术的发展....

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Published in红外与毫米波学报 Vol. 35; no. 6; pp. 766 - 768
Main Author 王文娟 李雪 陆卫 龚海梅 朱海军 丁瑞军 韩勤 王涛
Format Journal Article
LanguageChinese
Published 中国科学院上海技术物理研究所,上海,200083%中国科学院半导体研究所,北京,100083%西北工业大学,陕西西安,710072 2016
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ISSN1001-9014
DOI10.11972/j.issn.1001-9014.2016.06.020

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Summary:面向国家“战略性先进电子材料”的发展目标,以国家重大战略需求,如全球气候观测、农林普查、国土资源探测、环境监测、深空探测和天文观测等领域的技术发展中面临的光探测器瓶颈问题为突破口,瞄准半导体材料及其光探测器正在朝全光谱覆盖、大面阵、高灵敏等方向快速发展的国际态势,开展低维半导体异质结构材料与光电器件研究,发展该体系材料人工设计精细调控的关键技术,推动多波段多种类型的光电探测器技术进步,促进我国经济、社会、国家安全及科学技术的发展.
Bibliography:WANG Wen-Juan11 LI Xue11 LU Wei11 GONG Hai-Mei11 ZHU Hai-Jun21 DING Rui-Jun1, HAN Qin2, WANG Tao3( 1. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; 2. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; 3. Northwestern Polytechnical University, Xi' an 710072, China)
The major national strategic demands such as the global climate observation, agricultural cen- sus, land resources exploration, environmental monitoring, deep space exploration and astronomical observation are facing the bottleneck of photodetectors. Semiconductor materials and its photodetectors are rapidly developing in the direction of full-spectrum, large-array and high sensitivity, which meets the development goals of the national "strategic advanced electronic materials". In the project, low di- mensional semiconductor hetero-structure photoelectric materials and devices will be investigated. Materials are going to be artificially fine-tuned to promote the technologi
ISSN:1001-9014
DOI:10.11972/j.issn.1001-9014.2016.06.020