Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface
The emergence of saddle-point Van Hove singularities (VHSs) in the density of states, accompanied by a change in Fermi surface topology, Lifshitz transition, constitutes an ideal ground for the emergence of different electronic phenomena, such as superconductivity, pseudo-gap, magnetism, and density...
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Published in | Nature communications Vol. 10; no. 1; pp. 5534 - 7 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
England
Nature Publishing Group
04.12.2019
Nature Publishing Group UK Nature Portfolio |
Subjects | |
Online Access | Get full text |
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Summary: | The emergence of saddle-point Van Hove singularities (VHSs) in the density of states, accompanied by a change in Fermi surface topology, Lifshitz transition, constitutes an ideal ground for the emergence of different electronic phenomena, such as superconductivity, pseudo-gap, magnetism, and density waves. However, in most materials the Fermi level, [Formula: see text], is too far from the VHS where the change of electronic topology takes place, making it difficult to reach with standard chemical doping or gating techniques. Here, we demonstrate that this scenario can be realized at the interface between a Mott insulator and a band insulator as a result of quantum confinement and correlation enhancement, and easily tuned by fine control of layer thickness and orbital occupancy. These results provide a tunable pathway for Fermi surface topology and VHS engineering of electronic phases. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 Funai Foundation for Information Technology USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division Gordon and Betty Moore Foundation (GBMF) National Science Foundation (NSF) AC02-05CH11231; GBMF4859; 1740213 USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division |
ISSN: | 2041-1723 2041-1723 |
DOI: | 10.1038/s41467-019-13046-z |