Impedance spectroscopy of Sb 2 Se 3 photovoltaics consisting of (Sb 4 Se 6 ) n nanoribbons under light illumination

• Published in: Nanoscale Vol. 15; no. 48; pp. 19757 - 19766
• Main Authors: Park, Jaemin, Shalvey, Thomas P, Moehl, Thomas, Woo, Kyoohee, Major, Jonathan D, Tilley, S David, Yang, Wooseok
• Format: Journal Article
• Language: English
• Published: England 14.12.2023
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/D3NR04082H

Sb Se , consisting of one-dimensional (Sb Se ) nanoribbons has drawn attention as an intriguing light absorber from the photovoltaics (PVs) research community. However, further research is required on the performance-limiting factors in Sb Se PVs. In this study, we investigated the charge carrier behavior in Sb Se PVs by impedance spectroscopy (IS) under light illumination. (Sb Se ) nanoribbons with two different orientations were used to investigate the effect of crystal orientation on the device performance. Regardless of the (Sb Se ) orientation, negative capacitance was observed at forward bias, representing a recombination pathway at the TiO /Sb Se interface. A comparison of the recombination resistances and lifetimes of two different Sb Se PVs showed that a better interface could be formed by placing the (Sb Se ) ribbons parallel to the TiO layer. Based on these observations, an ideal structure of the Sb Se /TiO interface is proposed, which will enhance the performance of Sb Se PVs toward its theoretical limit.