Observation of nodal line in non-symmorphic topological semimetal InBi
Topological nodal semimetal (TNS), characterized by its touching conduction and valence bands, is a newly discovered state of quantum matter which exhibits various exotic physical phenomena. Recently, a new type of TNS called topological nodal line semimetal (TNLS) is predicted where its conduction...
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Published in | New journal of physics Vol. 19; no. 6; pp. 65007 - 65014 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Bristol
IOP Publishing
03.07.2017
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Subjects | |
Online Access | Get full text |
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Summary: | Topological nodal semimetal (TNS), characterized by its touching conduction and valence bands, is a newly discovered state of quantum matter which exhibits various exotic physical phenomena. Recently, a new type of TNS called topological nodal line semimetal (TNLS) is predicted where its conduction and valence band form a degenerate one-dimension line which is further protected by its crystal symmetry. In this work, we systematically investigated the bulk and surface electronic structure of the non-symmorphic, TNLS in InBi (which is also a type II Dirac semimetal) with strong spin-orbit coupling by using angle resolved photoemission spectroscopy. By tracking the crossing points of the bulk bands at the Brillouin zone boundary, we discovered the nodal-line feature along the k z direction, in agreement with the ab initio calculations and confirmed it to be a new compound in the TNLS family. Our discovery provides a new material platform for the study of these exotic topological quantum phases and paves the way for possible future applications. |
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Bibliography: | NJP-106330.R1 Chinese Academy of Sciences National Research Foundation of Korea (NRF) AC02-05CH11231; EP/M020517/1; CAS-SSRC-YH-2015-01; 291472; 2011-0030787 European Research Council (ERC) Engineering and Physical Sciences Research Council (EPSRC) USDOE Office of Science (SC), Basic Energy Sciences (BES) |
ISSN: | 1367-2630 1367-2630 |
DOI: | 10.1088/1367-2630/aa75a1 |