The role of arsenic in the operation of sulfur-based electrical threshold switches

• Published in: Nature communications Vol. 14; no. 1; pp. 6095 - 10
• Main Authors: Wu, Renjie, Gu, Rongchuan, Gotoh, Tamihiro, Zhao, Zihao, Sun, Yuting, Jia, Shujing, Miao, Xiangshui, Elliott, Stephen R., Zhu, Min, Xu, Ming, Song, Zhitang
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 29.09.2023; Nature Publishing Group; Nature Portfolio
• Subjects: 639/301/1005/1007; 639/925/357; Arsenic; Bonding strength; Chemical bonds; Crystal defects; Crystallization; Divacancies; Humanities and Social Sciences; Leakage current; multidisciplinary; Science; Science (multidisciplinary); Selectors; Semiconductors; Service life assessment; Silicon carbide; Sulfur; Switching

Arsenic is an essential dopant in conventional silicon-based semiconductors and emerging phase-change memory (PCM), yet the detailed functional mechanism is still lacking in the latter. Here, we fabricate chalcogenide-based ovonic threshold switching (OTS) selectors, which are key units for suppress...